Citation:
Kramer, T., Krueckl, V., Heller, E.J. & Parrott, R.E. Self-consistent calculation of electric potentials in Hall devices. Physical Review B 81, 205306 (2010).
Abstract:
Using a first-principles classical many-body simulation of a Hall bar, we study the necessary conditions for the formation of the Hall potential: (i) Ohmic contacts with metallic reservoirs, (ii) electron-electron interactions, and (iii) confinement to a finite system. By propagating thousands of interacting electrons over million time-steps we capture the build-up of the self-consistent potential. The microscopic model sheds light on the current injection process and directly links the Hall effect to specific boundary conditions at the particle reservoirs.